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Proceedings Paper

A study for the control of chemical residuals on photomasks by using a thermal treatment for 65-nm node
Author(s): Han-Byul Kang; Jong-Min Kim; Yong-Dae Kim; Hyun-Joon Cho; Sang-Soo Choi
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Paper Abstract

We have chosen a combination of thermal treatment and hot D.I water rinsing as a part of methodologies to remove chemical residuals on mask surface. A new step of thermal treatment has been inserted in our standard manufacturing procedure for EAPSM. After thermal treatment, Ion Chromatography (IC) methods are used to confirm the surface cleanliness. As a result of our study, thermal treatment can considerably reduce residuals (e.g. ammonium, sulfuric and others) on mask surface. So, it could be suggested that the thermal treatment is an effective way to minimize residual ions. Also, in order to understand on haze source and mechanism, we investigated on artificial acceleration method for haze formation. We preceded haze acceleration test by using modified haze acceleration system (UV 172nm light). From the acceleration test, we found that humidity, irradiation energy, concentration of chemical residuals are dominant factors of haze formation.

Paper Details

Date Published: 28 June 2005
PDF: 6 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617117
Show Author Affiliations
Han-Byul Kang, Photronics-PKL (South Korea)
Jong-Min Kim, Photronics-PKL (South Korea)
Yong-Dae Kim, Photronics-PKL (South Korea)
Hyun-Joon Cho, Photronics-PKL (South Korea)
Sang-Soo Choi, Photronics-PKL (South Korea)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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