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Proceedings Paper

A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node
Author(s): Eui-Sang Park; Hyun-Joon Cho; Jin-Min Kim; Sang-Soo Choi
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Paper Abstract

In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617065
Show Author Affiliations
Eui-Sang Park, PKL Co., Ltd. (South Korea)
Hyun-Joon Cho, PKL Co., Ltd. (South Korea)
Jin-Min Kim, PKL Co., Ltd. (South Korea)
Sang-Soo Choi, PKL Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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