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Proceedings Paper

Organic semiconductor structure and chemistry from near-edge X-ray absorption fine structure (NEXAFS) spectroscopy
Author(s): Dean M. DeLongchamp; Eric K. Lin; Daniel A. Fischer
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Paper Abstract

The ability to measure the structural development of organic semiconductor films and correlate it to the electrical characteristics of organic devices such as thin film transistors (OTFTs) is needed to facilitate the commercialization of this technology. Synchrotron-based Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy is a powerful tool that meets this need because it can non-destructively reveal both the structure and chemistry of thin organic films. The density of bonds involving Carbon, Nitrogen, Oxygen, and Fluorine can be quantified, a depth profile can be developed, and bond orientation can be determined. Here, we outline the principles of NEXAFS experimentation and data analysis with an emphasis on their application to organic semiconductor thin films. NEXAFS spectra of model organic semiconductors such as pentacene and poly(3-hexylthiophene) (P3HT) are used to demonstrate how NEXAFS can enhance understanding of the complex processing-structure relationships of semiconductor film formation and identify processing methods that may optimize device performance.

Paper Details

Date Published: 30 August 2005
PDF: 11 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400A (30 August 2005); doi: 10.1117/12.616776
Show Author Affiliations
Dean M. DeLongchamp, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Daniel A. Fischer, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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