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Proceedings Paper

Fabrication of p-n junctions in as-grown ZnMgO/ZnO films
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Paper Abstract

We achieved p-(Zn,Mg)O by doping with phosphorous and the conduction type was confirmed by capacitance-voltage properties of metal/insulator/p-(Zn,Mg)O:P diode structures as well as Hall measurements. The p-(Zn,Mg)O:P/n-ZnO junction was grown by pulsed laser deposition on bulk ZnO doped with Sn. Without post-growth annealing, the phosphorous-doped ZnMgO showed p-type conductivity (hole density ~1016 cm-3, mobility ~6 cm2V-1s-1) in the as-grown state. The metal contacts in top-to-bottom p-n junctions were made with Ni/Au as the p-ohmic and Ti/Au as the backside n-ohmic contact. The p-contacts showed improved characteristics after annealing up to 350 - 400 °C, but the n-contacts were ohmic as-deposited. The simple, low temperature growth (≤500 °C) and processing sequence (≤400 °C) shows the promise of ZnO for applications such as low-cost UV light emitters and transparent electronics.

Paper Details

Date Published: 14 September 2005
PDF: 7 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59411P (14 September 2005); doi: 10.1117/12.616668
Show Author Affiliations
Hyuck Soo Yang, Univ. of Florida (United States)
Y. Li, Univ. of Florida (United States)
D. P. Norton, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)
Soohwan Jang, Univ. of Florida (United States)
F. Ren, Univ. of Florida (United States)
L. A. Boatner, Oak Ridge National Lab. (United States)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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