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Proceedings Paper

Scatter analysis of optical components from 193 nm to 13.5 nm
Author(s): Sven Schroeder; Mathias Kamprath; Stefan Gliech; Angela Duparre
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Paper Abstract

Light scattering techniques allow a comprehensive characterization of surfaces and thin film coatings. Driven by the increasing demands on optical components for DUV lithography at 193 nm, a system for ARS and TS measurements at 193 nm and 157 nm has been developed at the Fraunhofer Institute in Jena. The set-up and measurement examples are presented ranging from ARS of low-scattering substrates and dielectric multilayers to the roughness analysis of EUV mirrors. To follow the recent developments of semiconductor industry towards EUV lithography at 13.5 nm, a new EUV scattering measurement system is developed. The current status is reported.

Paper Details

Date Published: 31 August 2005
PDF: 9 pages
Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780T (31 August 2005); doi: 10.1117/12.616423
Show Author Affiliations
Sven Schroeder, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Mathias Kamprath, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Stefan Gliech, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Angela Duparre, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)


Published in SPIE Proceedings Vol. 5878:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II
Angela Duparre; Bhanwar Singh; Zu-Han Gu, Editor(s)

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