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Proceedings Paper

High thermal stable and low resistance contacts to p-GaN for thin-GaN LED
Author(s): C. L. Lin; S. J. Wang; C. Y. Liu
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Paper Abstract

In this work, we investigate the optical and electrical properties of inserting a Ni thin barrier between contact layer, NiO-Au, and reflective layer, Al after sequent elevated annealing in air ambient. The reflectivity of NiO-Au/Ni/Al p-GaN contact configurations is 61% in 470nm which is 10% higher than NiO-Au/Al p-GaN contact configurations, after 500°C annealing. By inserting a Ni barrier layer, the specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to an annealing temperature of 500°C. The XPS results confirmed the function of the Ni barrier layer, and it shows relatively low atomic level of Al was detected in the GaN epi-layer. It was found that both the electrical and optical characteristics of NiO-Au/Ni/Al p-GaN contacts exhibited good thermal stability. This high thermal stable P-GaN enables the fabrication of thin-GaN LED device.

Paper Details

Date Published: 14 September 2005
PDF: 9 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59411M (14 September 2005); doi: 10.1117/12.616349
Show Author Affiliations
C. L. Lin, National Central Univ. (Taiwan)
S. J. Wang, National Central Univ. (Taiwan)
C. Y. Liu, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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