Share Email Print
cover

Proceedings Paper

Surface versus lateral illumination effects on an interdigitated Si planar PIN photodiode
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The planar PIN Photodiode (PD) has profound advantages compared to the vertical surface/edge illuminated PIN PD. A two dimensional interdigitated silicon PIN PD with a 58 microns × 80 microns active area and finger width of 2 microns and finger spacing of 10 microns respectively was modeled and simulated in a novel approach using Silvaco ATHENA and ATLAS software. The device was illuminated from the surface and laterally and comparison analysis was performed. At a reverse bias of -10 V, the dark current was 1 ps. Photocurrent of 500 nA was obtained for a 5 Wcm-2 optical beam power for both the surface and lateral illumination at a -10 V reverse bias. The total quantum efficiency of the laterally illuminated PIN PD at a wavelength of 850 nm was 95% (responsivity=0.65 A/W) and 75% (responsivity=0.52 A/W) for the surface illuminated PIN PD respectively. The -3dB cutoff frequency of the surface illuminated device was at ~10 kHz and for the laterally illuminated PIN PD, the frequency was at ~0.1 MHz. Lateral illumination in an interdigitated Si planar PIN PD produces higher photocurrent contributing to higher quantum efficiency, responsivity and frequency response as compared to surface illumination.

Paper Details

Date Published: 12 September 2005
PDF: 8 pages
Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810S (12 September 2005); doi: 10.1117/12.616283
Show Author Affiliations
P. Susthitha Menon, Univ. Kebangsaan Malaysia (Malaysia)
Sahbudin Shaari, Univ. Kebangsaan Malaysia (Malaysia)


Published in SPIE Proceedings Vol. 5881:
Infrared and Photoelectronic Imagers and Detector Devices
Randolph E. Longshore, Editor(s)

© SPIE. Terms of Use
Back to Top