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Proceedings Paper

n-channel organic thin film transistors and complementary inverters
Author(s): D. J. Gundlach; K. P. Pernstich; G. Wilckens; M. Grüter; S. Haas; B. Batlogg
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Paper Abstract

n-channel organic thin film transistors (OTFTs) with field-effect mobility comparable to that typically reported for p-channel pentacene TFTs were fabricated on oxidized silicon wafers using N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as the semiconductor. Au, Cr, Al, and LiF/Al source and drain contacts were studied. Accumulation mode n-channel transistor operation was demonstrated for all contact metals despite the large differences in their work functions. High field effect mobility near 0.6 cm2/Vs and large Ion/Ioff of 107 were achieved for the best device which compares favorably with the best reported performance for OTFTs fabricated using this class of material. Despite the impressive performance significant device instability was observed. n-channel TFT performance was sufficient to demonstrate pentacene/PTCDI-C13H27 TFT complementary inverters with a high gain of 140.

Paper Details

Date Published: 20 September 2005
PDF: 9 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400O (20 September 2005); doi: 10.1117/12.615897
Show Author Affiliations
D. J. Gundlach, ETH Zürich (Switzerland)
K. P. Pernstich, ETH Zürich (Switzerland)
G. Wilckens, ETH Zürich (Switzerland)
M. Grüter, ETH Zürich (Switzerland)
S. Haas, ETH Zürich (Switzerland)
B. Batlogg, ETH Zürich (Switzerland)

Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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