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Proceedings Paper

Transistors formed with solution-processed thin films of pentacene
Author(s): Takashi Minakata; Yutaka Natsume
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Paper Abstract

Solution-processed pentacene thin films could be prepared directly from pentacene solution without using precursor molecules. The solution-processed pentacene films showed highly oriented and highly crystalline structure. It appeared that large crystal-like platelets grown in the films, and it was assumed that crystalline size of solution-processed films was larger than that of sublimed films determined by in grazing incidence X-ray diffraction method and powder X-ray diffraction method. FETs formed with solution-processed films exhibited good switching properties with the mobility of 0.8cm2/Vs and on/off ratio above 105. Maximum carrier mobility above 1cm2/Vs was confirmed. The solution-processed film transistors showed lower threshold voltage due to lower carrier density in the films compared with sublimed films. It was confirmed that the solution-processed transistors showed more stable properties for the storage for months than sublimed film transistors. These aspects of transistor performance could be explained by structural difference between solution-processed and sublimed films. Transistors of solution-processed films of pentacene were fabricated by printing technique using a temperature controllable dispenser and the switching operations of isolated transistors were confirmed.

Paper Details

Date Published: 22 September 2005
PDF: 11 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400L (22 September 2005); doi: 10.1117/12.615886
Show Author Affiliations
Takashi Minakata, Asahi-Kasei Corp. (Japan)
OITDA, AIST (Japan)
Yutaka Natsume, Asahi-Kasei Corp. (Japan)
OITDA, AIST (Japan)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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