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Proceedings Paper

Stress analysis of transferred thin-GaN LED by Au-Si wafer bonding
Author(s): S. C. Hsu; C. Y. Liu
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Paper Abstract

Nowadays, the high power GaN-based LED has attracted serious attention for the lighting application. One of key issues for high power GaN-base LED to achieve sufficient lighting efficiency over the traditional light sources, such as, white incandescent and halogen light bulb is the efficiency of heat dissipation. Typically, GaN epi-layer is grown on sapphire substrates. The poor thermal conductivity of sapphire substrate has been identified to be the main limitation for the application of high power GaN LED. To improve the heat dissipation and lighting efficiency, we report a thin GaN structure by using Au-Si wafer bonding and Laser lift-off (LLO) technique. The GaN wafer was first deposited with a Au bonding layer and bonded onto a good thermal conduction substrate, i.e., heavy-doped Si. Then, 248nm KrF excimer Laser was used to strip the original sapphire substrate. To assure a successful GaN epi-layer transferring, Raman spectrum on the transferred GaN layer was performed and the result shows no quality change in the transferred GaN layer. In this work, we also fabricated the vertical LED devices on the transferred GaN epi-layer. Therefore, L-I-V result was obtained which will be presented in this talk. Moreover, we will discuss the effects and advantages of Au-Si bonding on the efficiency of lighting.

Paper Details

Date Published: 15 September 2005
PDF: 8 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 594116 (15 September 2005); doi: 10.1117/12.615677
Show Author Affiliations
S. C. Hsu, National Central Univ. (Taiwan)
C. Y. Liu, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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