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Proceedings Paper

Thin-film fullerenes for organic field-effect transistors and complementary digital logic circuits
Author(s): Joshua Haddock; Benoit Domercq; Bernard Kippelen
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Paper Abstract

Significant progress has been made in the area of p-type organic field-effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C60 and C70. Here, we report mobilities for C60 ranging from 0.02 cm2/Vs up to 0.65 cm2/Vs (depending on channel length), and mobilities from 0.003 cm2/Vs up to 0.066 cm2/Vs for C70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.

Paper Details

Date Published: 30 August 2005
PDF: 5 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594015 (30 August 2005); doi: 10.1117/12.615266
Show Author Affiliations
Joshua Haddock, Georgia Institute of Technology (United States)
Benoit Domercq, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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