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Proceedings Paper

Correlation between structural properties and stability of pentacene field effect transistors with a polymer / high-k oxide two layer gate dielectric
Author(s): A.-L. Deman; M. Erouel; D. Lallemand; M. Phaner-Goutorbe; P. Lang; J. Tardy
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Paper Abstract

In this work, we report on the study of pentacene field effect transistors with a polymer (PMMA) on a high-k oxide (Ta2O5) two-layer gate dielectric, in order to combine low voltage operating devices and stability. Two-layer dielectric devices were compared to single layer (Ta2O5 or PMMA) gate insulators. To assess the importance of the structural quality of the Ta2O5, two deposition processes (e-beam evaporation and anodization) are studied. In order to evidence the relation between the electrical performances and behavior and the structural quality of the organic thin film, X-ray diffraction and AFM measurements were carried out to determine the pentacene morphology and ordering on the different dielectrics. Devices with bilayer gate dielectric present the best mobility, up to 0,6cm²/V/s, the pentacene film being well ordered in large grains on PMMA with or without high-k under layer. The transistors operate at 15V and show reduced polarisation effect compared to devices with only Ta2O5.

Paper Details

Date Published: 7 August 2013
PDF: 9 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400E (7 August 2013); doi: 10.1117/12.614968
Show Author Affiliations
A.-L. Deman, Ecole Centrale de Lyon (France)
M. Erouel, Ecole Centrale de Lyon (France)
D. Lallemand, Ecole Centrale de Lyon (United States)
M. Phaner-Goutorbe, Ecole Centrale de Lyon (United States)
P. Lang, Univ. Denis-Diderot Paris VII (United States)
J. Tardy, Ecole Centrale de Lyon (France)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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