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Proceedings Paper

Novel organic photo FET using photo-sensitive gate dielectric layer
Author(s): M. Yoshida; H. Kawai; T. Kawai; S. Uemura; S. Hoshino; T. Kodzasa; T. Kamata
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Paper Abstract

We fabricated a novel type photo-FET using poly(N-vinylcarbazole) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer make the field-effect mobility μFET two order of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.

Paper Details

Date Published: 30 August 2005
PDF: 8 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594003 (30 August 2005); doi: 10.1117/12.614582
Show Author Affiliations
M. Yoshida, National Institute of Advanced Industrial Science and Technology (Japan)
H. Kawai, Tokyo Univ. of Science (Japan)
T. Kawai, Tokyo Univ. of Science (Japan)
S. Uemura, National Institute of Advanced Industrial Science and Technology (Japan)
S. Hoshino, National Institute of Advanced Industrial Science and Technology (Japan)
T. Kodzasa, National Institute of Advanced Industrial Science and Technology (Japan)
T. Kamata, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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