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Proceedings Paper

Effects of semiconductor-dielectric interfaces on polymeric thin-film transistors
Author(s): Michael L. Chabinyc; Alberto Salleo; Fred Endicott; Beng S. Ong; Yiliang Wu; Ping Liu; Martin J. Heeney; Iain McCulloch
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Paper Abstract

The interface between the semiconducting polymer and the gate dielectric is one of the most critical regions of a polymeric thin film transistor. For polymeric TFTs, it is difficult to disaggregate the contributions of the electronic structure of the semiconductor and that of the dielectric because, in part, the microstructure of thin films of semiconducting polymers is strongly affected by the chemical functionality at the surface of the dielectric. We have developed a lamination technique that can be used to transfer semiconducting films formed on surfaces that yield films with high mobility to other dielectrics. We have studied films of semiconducting polymers, such as poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene] and poly(3-hexylthiophene) using this method. The effects of self-assembled monolayers (SAMs) formed on inorganic dielectrics on device performance are discussed. Our results suggest that mobility is mainly controlled by the structure of the semiconducting film and that the threshold voltage of TFTs may be modified through the use of SAMs.

Paper Details

Date Published: 30 August 2005
PDF: 7 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594012 (30 August 2005); doi: 10.1117/12.614573
Show Author Affiliations
Michael L. Chabinyc, Palo Alto Research Ctr. (United States)
Alberto Salleo, Palo Alto Research Ctr. (United States)
Fred Endicott, Palo Alto Research Ctr. Inc. (United States)
Beng S. Ong, Xerox Research Ctr. of Canada (Canada)
Yiliang Wu, Xerox Research Ctr. of Canada (Canada)
Ping Liu, Xerox Research Ctr. of Canada (Canada)
Martin J. Heeney, Merck Chemicals (United Kingdom)
Iain McCulloch, Merck Chemicals (United Kingdom)

Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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