Share Email Print
cover

Proceedings Paper

Lifetime estimation of InGaAlP lasers under different operating conditions
Author(s): Yajun Li
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A model for low power (optical output power ≤10mW) InGaAlP lasers operating in the 650nm wavelength band is introduced. This model enables the user to predict lifetime of a diode laser under different operating conditions. Statistically meaningful data can be obtained from the model which gives quantitative values for the considerably increased laser lifetime when operating under less stress conditions.

Paper Details

Date Published: 31 August 2005
PDF: 10 pages
Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780Q (31 August 2005); doi: 10.1117/12.613917
Show Author Affiliations
Yajun Li, Symbol Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 5878:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II
Angela Duparre; Bhanwar Singh; Zu-Han Gu, Editor(s)

© SPIE. Terms of Use
Back to Top