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Proceedings Paper

GaAs radiation imaging detectors for nondestructive testing, medical, and biological applications
Author(s): Anton V. Tyazhev; Vladimir A. Novikov; Olga B. Koretskaya; Dmitry Y. Mokeev; Oleg P. Tolbanov; Sergey A. Ryabkov; Gennady I. Ayzenshtat
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Paper Abstract

Results obtained from development, construction, testing, and evaluation of GaAs:Cr ionizing radiation detectors and X-ray digital imaging systems based on such detectors are presented. The technology devised is shown to make possible the development of detectors with the following parameters: electron mobility - electron lifetime product of 10-4cm2/V, hole mobility - hole lifetime product of 10-6cm2/V, gamma-radiation resistance of ≥ 51Mrad, active layer thickness as great as 800μm, and detector chip dimensions of 51×51mm2. The detectors under consideration exhibit high speed of response (≤10ns) and high X- and charged-particle radiation sensitivity. The detector output signal is linearly dependent on the X-ray irradiation dose rate up to 120mR/s and X-ray quantum energy up to 3MeV. Scanning detection units to be used in mammographs and fluorographs and in nondestructive testing devices were constructed and tested. The spatial resolution of the detection systems is 5lp/mm.

Paper Details

Date Published: 16 September 2005
PDF: 9 pages
Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220Q (16 September 2005); doi: 10.1117/12.613410
Show Author Affiliations
Anton V. Tyazhev, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Vladimir A. Novikov, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Olga B. Koretskaya, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Dmitry Y. Mokeev, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Oleg P. Tolbanov, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Sergey A. Ryabkov, Siberian Physical-Technical Institute at Tomsk State Univ. (Russia)
Gennady I. Ayzenshtat, Scientific Research Institute of Semiconductor Devices (Russia)


Published in SPIE Proceedings Vol. 5922:
Hard X-Ray and Gamma-Ray Detector Physics VII
Ralph B. James; Larry A. Franks; Arnold Burger, Editor(s)

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