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Proceedings Paper

Isomer-pure synthesis and preparation of FET using thieno[f,f']bis[1]benzothiophene (syn, anti)
Author(s): Brigitte Wex; Bilal R. Kaafarani; Raoul Schroeder; Leszek A. Majewski; Martin Grell; Douglas C. Neckers
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Paper Abstract

The field-effect mobility in two isomers of thieno[f,f']bis[1]benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm2/Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior.

Paper Details

Date Published: 22 September 2005
PDF: 7 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594004 (22 September 2005); doi: 10.1117/12.613111
Show Author Affiliations
Brigitte Wex, Ctr. for Photochemical Sciences, Bowling Green (United States)
Bilal R. Kaafarani, American Univ. of Beirut (Lebanon)
Raoul Schroeder, Univ. of Sheffield (United Kingdom)
Leszek A. Majewski, Univ. of Sheffield (United Kingdom)
Martin Grell, Univ. of Sheffield (United Kingdom)
Douglas C. Neckers, Ctr. for Photochemical Sciences, Bowling Green (United States)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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