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Proceedings Paper

Record and reading of optical information in barrier structures on the chalcogenide glass base
Author(s): Victor I. Verlan
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Paper Abstract

Electrophotographic spectroscopy, low-frequency capacity and photoconductivity methods were applied to investigate density of the located states in a mobility band of amorphous semiconductors layers As2S3 II As2Se3. Quasicontinuous and strictly localized states of donor and acceptor types are found. The explanation of this is offered on the basis of existence of metastable states, which are created under light, X-Ray and electron excitation. On the basis of the mentioned materials barriers structures are created and elaborated devices for record and reading of optical information in them.

Paper Details

Date Published: 21 February 2005
PDF: 10 pages
Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); doi: 10.1117/12.612216
Show Author Affiliations
Victor I. Verlan, Optoelectronics Ctr. (Moldova)

Published in SPIE Proceedings Vol. 5822:
Information Technologies 2004
Andrei M. Andriesh; Veacheslav L. Perju, Editor(s)

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