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Proceedings Paper

New structure of photoreceivers for optic communications
Author(s): Valerian V. Dorogan; Tatiana S. Vieru; Andrei V. Dorogan
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Paper Abstract

New p-i-n photodiodes on the basis of InP-InGaAs-InGaAsP heterostructures for optic communications, possessing original characteristics, are presented in the paper. Their specific photosensibility was achieved by placing the p-n junction in InGaAsP frontal layer near the interface with InGaAs active layer. The photosensibility of realized photodiodes can be controlled in spectral range 1.3-1.6 &mu;m by reverse voltage. For reverse voltage less than a threshold one Urev < Uthr between frontal and active layers there is a potential barrier of about 0.4 eV for holes generated in active layer and they don’t participate in photocurrent. For voltage Urev > Uthr the boundary of space charge region extends into the InGaAs active layer and the potential barrier disappears. Thus, charge carriers generated in active layer are easy separated and a photosensibility in spectral range 1.3-1.65 &mu;m appears for Urev > Uthr. These photodiodes haven’t analog and can be successfully used in many fields of functional optoelectronics for receiving, decoding and processing the signals transferred by optic fibers.

Paper Details

Date Published: 21 February 2005
PDF: 11 pages
Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); doi: 10.1117/12.612195
Show Author Affiliations
Valerian V. Dorogan, Technical Univ. of Moldova (Moldova)
Tatiana S. Vieru, Technical Univ. of Moldova (Moldova)
Andrei V. Dorogan, Technical Univ. of Moldova (Moldova)

Published in SPIE Proceedings Vol. 5822:
Information Technologies 2004
Andrei M. Andriesh; Veacheslav L. Perju, Editor(s)

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