Share Email Print

Proceedings Paper

Physics of GaN devices
Author(s): Michael S. Shur
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We review the physics of GaN-based devices including pyroelectric and piezoelectric sensors, GaN-based Heterostructure Field Effect Transistors (HFETs); SAW and acousto-optics devices; UV Light Emitting Diodes, and THz plasma wave electronics devices using GaN HFETs, paying special attention to polarization effects. We also discuss oscillating electron and hole islands in semiconductor GaN or AlGaN grains embedded into a pyroelectric matrix with a larger spontaneous polarization.

Paper Details

Date Published: 23 May 2005
PDF: 8 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.611449
Show Author Affiliations
Michael S. Shur, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

© SPIE. Terms of Use
Back to Top