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Proceedings Paper

Wide continuously tunable 1.55µm vertical air-cavity wavelength selective elements for filters and VCSELs using micromachined actuation
Author(s): H. Hillmer; A. Tarraf; F. Riemenschneider; S. Irmer; H. Halbritter; J. Daleiden; F. Romer; C. Prott; E. Ataro; A. Hasse; M. Strassner; S. Hansmann; P. Meissner
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Paper Abstract

Tailored scaling allows the effectiveness of physical effects and mechanical stability to be enhanced. This is shown for micromachined 1.55μm vertical-resonator-based filters and VCSELs, capable of wide, continuous, and kink-free tuning by a single control parameter. Tuning is achieved by mechanically actuating one or several membranes in a vertical air-gap resonator including two highly reflective DBR mirrors. Electrostatically actuatable single-chip filters including InP/air-gap DBR's (3.5 periods) reveal a continuous tuning up to 14% of the absolute wavelength. Varying a reverse voltage (U=0 .. -3.2V) between the membranes (almost flat in the unactuated condition) a tuning range up to 142nm was obtained. Varying a reverse voltage (U=0 .. -28V) between the membranes (strained and curved in the unactuated condition) a tuning range up to 221nm was obtained. Optically pumped and continuously tunable 1.55μm VCSELs show 26nm spectral tuning range, 400μW maximum output power, and 57dBm SMSR. This two-chip VCSEL has a movable top mirror membrane, which is precisely designed to obtain a specific air-gap length and a tailored radius of curvature in order to efficiently support the fundamental optical mode of the plane-concave resonator. The curved top mirror DBR membrane consists of periodically alternating differently stressed silicon nitride and silicon dioxide multilayers. The lower InP-based part consists of the InP/GaInAsP bottom DBR and the GaInAsP active region.

Paper Details

Date Published: 3 June 2005
PDF: 15 pages
Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.611337
Show Author Affiliations
H. Hillmer, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
A. Tarraf, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
F. Riemenschneider, Technical Univ. of Darmstadt (Germany)
S. Irmer, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
H. Halbritter, Technical Univ. of Darmstadt (Germany)
J. Daleiden, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
F. Romer, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
C. Prott, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
E. Ataro, Univ. of Kassel (Germany)
Ctr. for Interdisciplinary Nanostructure Science and Technology (Germany)
A. Hasse, Innovative Processing AG (Germany)
M. Strassner, Royal Institute of Technology (Sweden)
S. Hansmann, Innovative Processing AG (Germany)
P. Meissner, Technical Univ. of Darmstadt (Germany)


Published in SPIE Proceedings Vol. 5825:
Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
John Gerard McInerney; Harold S. Gamble; Gerald Farrell; David M. Denieffe; Padraig Hughes; R. Alan Moore; Liam Barry, Editor(s)

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