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Proceedings Paper

A novel light-emitting structure for the 3- to 5-µm spectral range
Author(s): J. W. Tomm; F. Weik; R. Glatthaar; U. Vetter; J. Nurnus; A. Lambrecht; B. Spellenberg; M. Bassler; M. Behringer; J. Luft
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Paper Abstract

We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbSe-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25 °C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 μm, with a half width of 770 nm (50 meV). Details about the optimization of the emitter material and device design are discussed as well.

Paper Details

Date Published: 28 April 2005
PDF: 8 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.611330
Show Author Affiliations
J. W. Tomm, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
F. Weik, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
R. Glatthaar, Fraunhofer Institut Physikalische Messtechnik (Germany)
U. Vetter, Fraunhofer Institut Physikalische Messtechnik (Germany)
J. Nurnus, Fraunhofer Institut Physikalische Messtechnik (Germany)
A. Lambrecht, Fraunhofer Institut Physikalische Messtechnik (Germany)
B. Spellenberg, Thermosensorik GmbH (Germany)
M. Bassler, Thermosensorik GmbH (Germany)
M. Behringer, OSRAM Opto Semiconductors (Germany)
J. Luft, OSRAM Opto Semiconductors (Germany)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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