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Proceedings Paper

Pressure tuning of GaInNAs laser diodes in external cavity
Author(s): A. Bercha; F. Dybala; K. Komorowska; P. Adamiec; R. Bohdan; W. Trzeciakowski; J. A. Gupta; P. J. Barrios; G. J. Pakulski; A. Delage; Z. R. Wasilewski
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Paper Abstract

High hydrostatic pressure can be used for wavelength tuning of semiconductor laser diodes in a wide spectral range. Coupling the laser with external grating leads to wavelength tuning within the gain spectrum (i.e. in a narrower range than with pressure) but allows for a narrow emission line and nearly continuous tuning (mode-hop free if anti-reflecting coating is applied). Here we demonstrate a combination of pressure and external-resonator tuning for the GaInNAs laser emitting at 1343 nm at ambient conditions. Using the specially designed liquid pressure cell working up to 20 kbar we shift the emission down to 1170 nm while the external grating (used in Littrow configuration) allows for fine tuning in the ~10 nm range (at each pressure).

Paper Details

Date Published: 28 April 2005
PDF: 8 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.611325
Show Author Affiliations
A. Bercha, Unipress Institute of High Pressure Physics (Poland)
Uzhgorod National Univ. (Ukraine)
F. Dybala, Unipress Institute of High Pressure Physics (Poland)
K. Komorowska, Unipress Institute of High Pressure Physics (Poland)
P. Adamiec, Unipress Institute of High Pressure Physics (Poland)
R. Bohdan, Unipress Institute of High Pressure Physics (Poland)
W. Trzeciakowski, Unipress Institute of High Pressure Physics (Poland)
J. A. Gupta, National Research Council (Canada)
P. J. Barrios, National Research Council (Canada)
G. J. Pakulski, National Research Council (Canada)
A. Delage, National Research Council (Canada)
Z. R. Wasilewski, National Research Council (Canada)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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