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Proceedings Paper

Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)
Author(s): Hei Wong; Hiroshi Iwai; J. J. Liou
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Paper Abstract

It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

Paper Details

Date Published: 23 May 2005
PDF: 13 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.610124
Show Author Affiliations
Hei Wong, Tokyo Institute of Technology (Japan)
City Univ. (Hong Kong China)
Hiroshi Iwai, Tokyo Institute of Technology (Japan)
J. J. Liou, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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