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Proceedings Paper

Low frequency noise in SOI transistors
Author(s): Tony Tseng; J. C. S. Woo
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Paper Abstract

With the inherent advantages in SOI CMOS technology, minimizing DC and switching floating body effects have enabled high speed digital processors with more than a 25% improvement over bulk silicon CMOS design. Currently, there is a need for a more comprehensive understanding of AC characteristics on SOI CMOS technology for mixed-mode baseband and RF (radio frequency) applications. The objective of this paper is to present a study of unique AC floating body effects and the resultant low-frequency noise overshoot phenomenon in SOI CMOS technology. Further study of their impact on the RF arena will also be discussed.

Paper Details

Date Published: 23 May 2005
PDF: 8 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609628
Show Author Affiliations
Tony Tseng, Univ. of California/Los Angeles (United States)
J. C. S. Woo, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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