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Proceedings Paper

Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology
Author(s): Enhai Zhao; Ramkumar Krithivasan; Akil K. Sutton; Zhenrong Jin; John D. Cressler; Badih El-Kareh; Scott Balster; Hiroshi Yasuda
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Paper Abstract

We present a comprehensive investigation of the fundamental differences in low frequency noise behavior between npn and pnp SiGe HBTs. Geometry effects on the low frequency noise are assessed, as well as the impact of interfacial oxide(IFO) thickness on pnp noise characteristics. Temperature measurements and ionizing radiation are used to probe the fundamental physics of 1/f noise in npn and pnp SiGe HBTs. The npn transistors show a stronger size dependence than the pnp transistors. The 1/f noise for pnp SiGe HBTs exhibits an exponential dependence on IFO thickness, indicating that IFO produces the main contribution. In most cases, the magnitude of the 1/f noise has quadratic dependence on the base current(IB), the only exception being for the post-radiation npn transistor biased at low base currents, which exhibits a near-linear dependence on IB. In the proton radiation experiments, the pnp devices show better radiation tolerance than the npn devices. The observed temperature dependence for both types is quiet weak, consistent a tunneling mechanism.

Paper Details

Date Published: 23 May 2005
PDF: 11 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609342
Show Author Affiliations
Enhai Zhao, Georgia Institute of Technology (United States)
Ramkumar Krithivasan, Georgia Institute of Technology (United States)
Akil K. Sutton, Georgia Institute of Technology (United States)
Zhenrong Jin, Georgia Institute of Technology (United States)
John D. Cressler, Georgia Institute of Technology (United States)
Badih El-Kareh, Texas Instruments (Germany)
Scott Balster, Texas Instruments (Germany)
Hiroshi Yasuda, Texas Instruments (Germany)


Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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