Share Email Print

Proceedings Paper

Anomalous low-frequency noise behavior in 210 GHz SiGe HBTs
Author(s): Zhenrong Jin; Jarle A. Johansen; John D. Cressler; Alvin J. Joseph
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present a comprehensive study of low-frequency noise mechanisms in 210 GHz SiGe HBTs using a variety of measurement techniques, and explain a unique scaling effect. The implication of these noise mechanisms on SiGe HBT compact modeling methodologies are also discussed.

Paper Details

Date Published: 23 May 2005
PDF: 7 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609300
Show Author Affiliations
Zhenrong Jin, Georgia Tech (United States)
Jarle A. Johansen, Univ. of Tromso (Norway)
John D. Cressler, Georgia Tech (United States)
Alvin J. Joseph, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

© SPIE. Terms of Use
Back to Top