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Proceedings Paper

Anomalous transport and memory in quantun dot arrays (Invited Paper)
Author(s): Dmitry S. Novikov; Marija Drndic; Leonid S. Levitov; Marc A. Kastner; Mirna V. Jarosz; Moungi G. Bawendi
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Paper Abstract

We address anomalous transport phenomena in arrays of semiconductor nanocrystals (quantum dots): Transient power-law decay of current as a response to a step in large bias voltage applied across the array, as well as memory effects observed after successive applications of the bias voltage. A novel phenomenological model of transport in such systems is proposed, capable of rationalizing both anomalous transport and memory. The model describes electron transport by a stationary Levy process of transmission events and therefore requires no time dependence of system properties. The long tail in the waiting time distribution gives rise to a nonstationary response in the presence of a voltage pulse. Noise measurements agree well with the predicted non-Poissonian fluctuations in current. We briefly discuss possible microscopic mechanisms that could cause the anomalous statistics in transmission.

Paper Details

Date Published: 23 May 2005
PDF: 6 pages
Proc. SPIE 5843, Fluctuations and Noise in Materials II, (23 May 2005); doi: 10.1117/12.609279
Show Author Affiliations
Dmitry S. Novikov, Princeton Univ. (United States)
Marija Drndic, Univ. of Pennsylvania (United States)
Leonid S. Levitov, Massachusetts Institute of Technology (United States)
Marc A. Kastner, Massachusetts Institute of Technology (United States)
Mirna V. Jarosz, Massachusetts Institute of Technology (United States)
Moungi G. Bawendi, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5843:
Fluctuations and Noise in Materials II
Peter Svedlindh; Dragana Popovic; Michael B. Weissman, Editor(s)

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