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Proceedings Paper

Low-frequency noise measurements used for semiconductors light active devices
Author(s): Jiri Vanek; Zdenek Chobola; Vladimir Brzokoupil; Jiri Kazelle
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Paper Abstract

Three different sets of semiconductors light active devices were by low frequency noise diagnostic described. In the first set the low frequency noise of 2.3 μm CW GaSb based Laser Diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured. The results of noise measurement in all systems were compared.

Paper Details

Date Published: 23 May 2005
PDF: 8 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.609228
Show Author Affiliations
Jiri Vanek, Brno Univ. of Technology (Czech Republic)
Zdenek Chobola, Brno Univ. of Technology (Czech Republic)
Vladimir Brzokoupil, Brno Univ. of Technology (Czech Republic)
Jiri Kazelle, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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