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Proceedings Paper

Silicon resonant cavity enhanced photodetectors at 1.55 μm
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Paper Abstract

Silicon optical receivers, operating at the optical communication wavelengths in the 1.3-1.55 μm range, have attracted much research effort. Unfortunately, the performance of the devices proposed in literature are poor because this wavelength range is beyond the absorption edge of silicon. In order to extend the maximum detectable wavelength, the most common approach, in the realization of Si-based detectors, is the use of silicon-germanium layers on silicon, anyway, requiring processes non compatible with standard CMOS technology. In this paper, with the aim to extend the operation of silicon-based photo-detectors up to the 1.3-1.55 μm range, an alternative approach is investigated: we propose the design of a resonant cavity enhanced Schottky photodetector based on the internal photoemission effect. The device fabrication is completely compatible with standard silicon technology.

Paper Details

Date Published: 7 July 2005
PDF: 9 pages
Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); doi: 10.1117/12.608984
Show Author Affiliations
M. Casalino, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
L. Sirleto, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
L. Moretti, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
D. Panzera, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
S. Libertino, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
I. Rendina, Istituto per la Microelettronica e Microsistemi, CNR (Italy)


Published in SPIE Proceedings Vol. 5840:
Photonic Materials, Devices, and Applications
Goncal Badenes; Derek Abbott; Ali Serpenguzel, Editor(s)

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