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Proceedings Paper

Noise in SiGe HBTs: opportunities and challenges
Author(s): John D. Cressler
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Paper Abstract

SiGe technology represents a remarkable success story for the microelectronics industry, and possesses the capability to fundamentally reshape the way broadband communications systems are conceived and built in the 21st century. From the first demonstration of a functional SiGe HBT in 1987, until the achievement of the present performance record of 375 GHz peak cutoff frequency, a mere 18 years has elapsed! The SiGe HBT is the first practical bandgap-engineered Si device, and has evolved from simple transistor and circuit demonstrations in a select few research laboratories to robust production in upwards of two-dozen manufacturing facilities around the world in 2005, and commercial products abound across a wide spectrum of commercial applications. This paper reviews the state-of-the-art in SiGe technology, discusses the design and operational principles of SiGe HBTs, and then focuses on the broadband and low-frequency noise characteristics of SiGe HBTs, emphasizing both the opportunities and the challenges which will necessarily be faced with continued device scaling.

Paper Details

Date Published: 23 May 2005
PDF: 19 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.608773
Show Author Affiliations
John D. Cressler, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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