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Proceedings Paper

MOSFET 1/f noise under switched bias conditions
Author(s): Michael Y. Louie; L. Forbes
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Paper Abstract

Klumperink et al., have recently had a number of publications on the low frequency noise of MOSFET’s under switched gate bias conditions. Since this is an important consideration in the low frequency noise in analog circuits with switching we have investigated the experimental technique used in some detail. No consideration was given to phase noise, a mixing with and modulation of the switched bias drain current by l/f noise in the analysis of the data. This can result in a response on the spectrum analyzer which corresponds very closely to the experimental data where the switched bias off gate voltage is near the threshold voltage. If the switched bias off gate voltage is near zero however we have also found a reduction in the l/f noise at low frequencies with switched bias. Here we have also investigated the time dependence of switched bias l/f noise and have found long term transients in the time domain.

Paper Details

Date Published: 23 May 2005
PDF: 8 pages
Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); doi: 10.1117/12.608763
Show Author Affiliations
Michael Y. Louie, Oregon State Univ. (United States)
L. Forbes, Oregon State Univ. (United States)


Published in SPIE Proceedings Vol. 5844:
Noise in Devices and Circuits III
Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, Editor(s)

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