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Proceedings Paper

Control of p- and n-type conduction in ZnO films and properties of ZnO p-n homojunctions
Author(s): Canyun Zhang; Jiming Bian; Xiao Min Li
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Paper Abstract

ZnO has attracted considerable attention as a potential candidate for short-wavelength optoelectronic devices. How to realize p-type ZnO films and ZnO p-n junctions is the key step for application of ZnO-based devices. We report the growth and properties of p-type ZnO films by combination of nitrogen and indium (N-In) codoping method and ultrasonic spray pyrolysis technique. The controllability of conductivity type in ZnO based films can be realized by adjusting the deposition and doping parameters. A conversion from p-type conduction to n-type conduction in a range of temperature has been identified by the measurement of Seebeck and Hall-effect for the first time. The two-layer structured ZnO p-n homojunctions with good rectifying characteristics were successfully prepared by depositing undoped ZnO on N-In codoped ZnO film. These achievements indicate it should be possible to fabricate ZnO-based optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) in the near future.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608693
Show Author Affiliations
Canyun Zhang, Shanghai Institute of Ceramics, CAS (China)
Jiming Bian, Shanghai Institute of Ceramics, CAS (China)
Xiao Min Li, Shanghai Institute of Ceramics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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