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Proceedings Paper

A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories
Author(s): Hyoung-Joo Kim; Gil-Su Kim; Soo-Won Kim
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Paper Abstract

In this paper, a Dickson charge pump circuit driven by boosted clock for low-voltage flash memories is proposed. Voltage pumping gain of each stage can be considerably improved by using high-voltage clock instead of using conventional clock. Since the voltage gain of each stage can be considerably increased by using this method, it can generate a high output voltage although the body effect still exists. Simulation results show that it can generate enough voltage to apply to the flash memory even at a supply voltage less than 1.5V. Because this method can be applied to almost all types of the improved Dickson charge pump circuits, it is expected that this method will improve the performance of the high voltage generating circuits for low-voltage flash memories.

Paper Details

Date Published: 30 June 2005
PDF: 8 pages
Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); doi: 10.1117/12.608672
Show Author Affiliations
Hyoung-Joo Kim, Korea Univ. (South Korea)
Gil-Su Kim, Korea Univ. (South Korea)
Soo-Won Kim, Korea Univ. (South Korea)


Published in SPIE Proceedings Vol. 5837:
VLSI Circuits and Systems II
Jose Fco. Lopez; Francisco V. Fernandez; Jose Maria Lopez-Villegas; Jose M. de la Rosa, Editor(s)

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