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Proceedings Paper

A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications
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Paper Abstract

In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 um technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits

Paper Details

Date Published: 30 June 2005
PDF: 11 pages
Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); doi: 10.1117/12.608508
Show Author Affiliations
R. Pulido, Univ. de Las Palmas de Gran Canaria (Spain)
S. L. Khemchandani, Univ. de Las Palmas de Gran Canaria (Spain)
A. Goni-Iturri, Univ. de Las Palmas de Gran Canaria (Spain)
R. Diaz, Univ. de Las Palmas de Gran Canaria (Spain)
A. Hernandez, Univ. de Las Palmas de Gran Canaria (Spain)
J. del Pino, Univ. de Las Palmas de Gran Canaria (Spain)


Published in SPIE Proceedings Vol. 5837:
VLSI Circuits and Systems II
Jose Fco. Lopez; Francisco V. Fernandez; Jose Maria Lopez-Villegas; Jose M. de la Rosa, Editor(s)

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