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Proceedings Paper

Band-pass transimpedance read-out circuit for UHF MEMS resonator applications
Author(s): Humberto Campanella; Arantxa Uranga; Zachary Davis; Jaume Esteve; Lluis Teres; Nuria Barniol
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Paper Abstract

A detailed description of a read-out amplifier for high frequency MEMS resonators is done. Both read-out requirements and circuit architecture are presented. The architecture of the system is mainly based on three blocks: a trans-impedance amplifier, followed by a three-stage voltage-to-voltage amplifier, and finally by an output buffer amplifier. Physical design is based on AMS 0,35 μm technology. Also, simulation and fabrication results are presented and analyzed. Simulation results show an AC transimpedance gain of 70 dBΩ and a cut-off frequency of 400 MHz, for a band-pass bandwidth over 350 MHz. The fabricated amplifier has an input noise current spectral density of 11 pA/(Hz)1/2, a power dissipation of 200 mW, and occupies an active area of 600 μm * 450μm. Integration of read-out circuit with MEMS resonator has been designed and implemented, by properly connection of MEMS signals to the amplifier, in order to enable characterization of a set of MEMS resonators. Integration analysis will allow future extraction of electrical parameters of the resonator.

Paper Details

Date Published: 30 June 2005
PDF: 10 pages
Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); doi: 10.1117/12.608331
Show Author Affiliations
Humberto Campanella, Ctr. Nacional de Microelectronica-IMB-CSIC (Spain)
Arantxa Uranga, Univ. Autonoma de Barcelona (Spain)
Zachary Davis, EPSON-Europe Electronics GmbH (Spain)
Jaume Esteve, Ctr. Nacional de Microelectronica-IMB-CSIC (Spain)
Lluis Teres, Ctr. Nacional de Microelectronica-IMB-CSIC (Spain)
Nuria Barniol, Univ. Autonoma de Barcelona (Spain)

Published in SPIE Proceedings Vol. 5837:
VLSI Circuits and Systems II
Jose Fco. Lopez; Francisco V. Fernandez; Jose Maria Lopez-Villegas; Jose M. de la Rosa, Editor(s)

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