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Proceedings Paper

Ring oscillator behavior after oxide breakdown
Author(s): R. Fernandez; R. Rodriguez; M. Nafria; X. Aymerich
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Paper Abstract

The influence of the oxide hard breakdown (HBD) path location along the channel in nMOSFETS on the performance and power consumption of a five stages ring oscillator has been evaluated. A simple MOSFET transistor model which takes into account the oxide BD has been used to do the analysis. The results show that in some cases, after oxide BD, the ring oscillator still operates but the circuit could fail due to higher consumption.

Paper Details

Date Published: 30 June 2005
PDF: 6 pages
Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); doi: 10.1117/12.608245
Show Author Affiliations
R. Fernandez, Univ. Autonoma de Barcelona (Spain)
R. Rodriguez, Univ. Autonoma de Barcelona (Spain)
M. Nafria, Univ. Autonoma de Barcelona (Spain)
X. Aymerich, Univ. Autonoma de Barcelona (Spain)


Published in SPIE Proceedings Vol. 5837:
VLSI Circuits and Systems II
Jose Fco. Lopez; Francisco V. Fernandez; Jose Maria Lopez-Villegas; Jose M. de la Rosa, Editor(s)

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