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Proceedings Paper

Charge storage in Si nanocrystals embedded in SiO2 with enhanced C-AFM
Author(s): M. Porti; M. Avidano; M. Nafria; X. Aymerich; J. Carreras; B. Garrido
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Paper Abstract

A Conductive Atomic Force Microscope (C-AFM) has been used to investigate the nanometer scale electrical properties of Metal-Oxide-Semiconductor (MOS) memory devices with Silicon nanocrystals (Si-nc) embedded in the gate oxide. This study has been possible thanks to the high lateral resolution of the technique, which allows to characterize areas of only few hundreds of nm2 and, therefore, the area that contains a reduced number of Si-nc. The results have demonstrated the capability of the Si-nc to enhance the gate oxide electrical conduction due to trap assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~20% of the Si-nc are charged. These nanometer scale results are consistent with those obtained during the macroscopic characterization of the same structures. Therefore, C-AFM has been shown to be a very suitable tool to perform a detailed investigation of the performance of memory devices based on MOS structures with Si-nc at such reduced scale.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5838, Nanotechnology II, (28 June 2005); doi: 10.1117/12.608206
Show Author Affiliations
M. Porti, Univ. Autonoma de Barcelona (Spain)
M. Avidano, Univ. Autonoma de Barcelona (Spain)
M. Nafria, Univ. Autonoma de Barcelona (Spain)
X. Aymerich, Univ. Autonoma de Barcelona (Spain)
J. Carreras, Univ. de Barcelona (Spain)
B. Garrido, Univ. de Barcelona (Spain)


Published in SPIE Proceedings Vol. 5838:
Nanotechnology II
Paolo Lugli; Laszlo B. Kish; Javier Mateos, Editor(s)

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