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Proceedings Paper

The studies of room-temperature electrical resistivity of post-annealed LaNiO3-ð thin film on Si(100)/n by RF magnetron sputtering
Author(s): X. D. Zhang; Xiang Jian Meng; J. L. Sun; G. S. Wang; Tie Lin; Jun Hao Chu
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Paper Abstract

Highly (100)-oriented LaNiO3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ~9×10-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ~3×10-4 Ωcm at 700°C and yield crack at 800°C.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608173
Show Author Affiliations
X. D. Zhang, Shanghai Institute of Technical Physics, CAS (China)
Xiang Jian Meng, Shanghai Institute of Technical Physics, CAS (China)
J. L. Sun, Shanghai Institute of Technical Physics, CAS (China)
G. S. Wang, Shanghai Institute of Technical Physics, CAS (China)
Tie Lin, Shanghai Institute of Technical Physics, CAS (China)
Jun Hao Chu, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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