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Proceedings Paper

SiCN and Ta/TaN barriers for Cu/ultra low-k integration in 0.13µm technology
Author(s): L. Y. Yang; D. H. Zhang; C. Y. Li; Peiwei Lu; P. D. Foo
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Paper Abstract

Single damascene Cu lines using bi-layer Ta/TaN barrier with and without SiCN and plasma treatment for Cu-ultra low-k interconnect in 0.13μm technology have been investigated. It was found that the N2/H2 plasma treatment on the ULK surface before depositing barrier and Cu could reduce the line resistance significantly, but it also brought more surface defects on the sidewall and larger diffusion length. Compared with only Ta/TaN barrier layer structure, introduction of an additional SiCN layer could significantly improve the breakdown voltage, line to line leakage and thermal stability. This is because the thin SiCN layer not only effectively blocks diffusion of elements on both sides, but also significantly improves the mechanical property of the ultra low-k polymer.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608171
Show Author Affiliations
L. Y. Yang, Nanyang Technological Univ. (Singapore)
D. H. Zhang, Nanyang Technological Univ. (Singapore)
C. Y. Li, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Peiwei Lu, Institute of Microelectronics (Singapore)
P. D. Foo, Institute of Microelectronics (Singapore)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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