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Proceedings Paper

Structural and electrical properties of Nd- and V-modified bismuth titanate thin films by sol-gel processing
Author(s): Jinrong Cheng; Liang He; Zhongyan Meng
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Paper Abstract

In this paper, Nd- and V- modified Bi3.15Nd0.85Ti3O12 (BNT), Bi3.15Nd0.85Ti2.97V0.03O12 (BNTV) and Bi4Ti3O12 (BIT) thin films were prepared on platinized silicon substrates by a using sol-gel processing. X-ray diffraction (XRD) analysis revealed that a single-phase BIT-type structure with (00l) preferred orientation was obtained for BNT and BNTV thin films annealed at 700 °C for 2 hours. Scanning Electric Microscopy (SEM) images showed that BNT and BNTV thin films had round and rod like grains, with the size of around 200-400 nm. BNT and BNTV thin films revealed improved dielectric and ferroelectric properties relative to BIT thin films. For the 1.12 µm thick BNT thin films, the dielectric constant achieves 428 at 1kHz, the remnant polarization and coercive field are of 17 µC/cm2 and 100 kV/cm, respectively. BNT thin films remained excellent electrical strength under the field as high as 600 kV/cm.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608048
Show Author Affiliations
Jinrong Cheng, Shanghai Univ. (China)
Liang He, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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