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Proceedings Paper

Preparation of CoSi2 using microwave hydrogen plasma annealing
Author(s): Tao Wang; Yong Bin Dai; S. K. Ouyang; He Sheng Shen; Jian Shen Wu
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Paper Abstract

Microwave hydrogen plasma annealing of sputter-deposited cobalt films on Si(100) substrate was utilized to form CoSi2 films which were characterized utilizing X-ray diffraction(XRD), Auger electron spectra(AES) sputter depth profile and cross-sectional Field Emission Scanning Electron Microscope (FESEM). Polycrystalline CoSi2, dominated by components with (111), was grown at the annealing temperature 600°C whereas microwave hydrogen plasma annealing at 750°C made components with (100) dominated. Moreover, it speculates that microwave anneal which promote Co atoms diffusion into Si substrate for nano-meter cobalt film during microwave anneal.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608042
Show Author Affiliations
Tao Wang, Shanghai Jiao Tong Univ. (China)
Yong Bin Dai, Shanghai Jiao Tong Univ. (China)
S. K. Ouyang, Shanghai Jiao Tong Univ. (China)
He Sheng Shen, Shanghai Jiao Tong Univ. (China)
Jian Shen Wu, Shanghai Jiao Tong Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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