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Proceedings Paper

The simulation of growth process of thin film on nonplanar substrate
Author(s): Hong Ji Qi; Jian Da Shao; Dong Ping Zhang; Kui Yi; Zheng Xiu Fan
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Paper Abstract

In (2+1) dimension, growth process of thin film on non-planar substrate in Kuramoto-Sivashinsky (K-S) model is studied with the numerical simulation approach. 15×15 semi-ellipsoids arranged orderly on the surface of substrate are used to represent initial rough surface of substrate. The results show that at the initial stage of growth process, the interface width constantly decreases with the growth time, then it reaches minimum. However, with the increase of growth time, the granules of different sizes distributes evenly on the surface of thin film. Whereafter the size of granules and the interface width gradually increase with the growth time, and the surface of thin film presents fractal properties.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608041
Show Author Affiliations
Hong Ji Qi, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Jian Da Shao, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Dong Ping Zhang, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Kui Yi, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Zheng Xiu Fan, Shanghai Institute of Optics and Fine Mechanics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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