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Proceedings Paper

Structural and electrical properties of high-κ Al2O3-ZrO2 gate dielectrics on SOI substrate
Author(s): Yan Fang Ding; G. S. Ye; N. L. Zhang; Ming Zhu; Cheng Lu Lin; Ziqiang Zhu
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Paper Abstract

With the rapid development of semiconductor technology, feature size of MOSFET devices is scaling down. In the meantime the scaling down of the layer thickness of the gate insulator (SiO2) in advanced MOS devices is expected to reach its fundamental limit. But tunneling current through gate dielectrics and reliability become serious problems. From the point of view of both gate leakage current limitation and the stability and reliability of devices, it is necessary to seek some novel high κ dielectrics for low power sub-100-nm MOS transistor, whose physical thickness is big enough to suppress the tunneling effect, while at the same time keeping and increasing their capacitance.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608038
Show Author Affiliations
Yan Fang Ding, East China Normal Univ. (China)
G. S. Ye, Shanghai Institute of Microsystem and Information Technology, CAS (China)
N. L. Zhang, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Ming Zhu, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Cheng Lu Lin, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Ziqiang Zhu, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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