Share Email Print

Proceedings Paper

Preparation and characterization of [100]-oriented diamond films by HFCVD
Author(s): Qingfeng Su; Yiben Xia; Linjun Wang; Ling Ren; Minglong Zhang; Weimin Shi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we report high quality [100]-oriented diamond films prepared by HFCVD using hydrogen as carrier gas and C2H5OH as carbon source for the first time. The surface morphology observed by SEM showed polycrystalline diamond films with [100] faced structure with an average grain size of ~20 μm. The Raman spectrum indicated sp3 bonding with a sharp peak at 1333 cm-1. The I-V characteristics obtained via Au contact were determined by semiconductor characterization system. The electrical resistivity of HFCVD [100]-oriented diamond film was ~3.0x1010Ω cm. The capacitance and dielectric loss of films were very small with the value of 2.0pF and 0.02, respectively, and almost had no dependence with the change of frequency in high frequencies.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608037
Show Author Affiliations
Qingfeng Su, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Ling Ren, Shanghai Univ. (China)
Minglong Zhang, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

© SPIE. Terms of Use
Back to Top