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Proceedings Paper

Properties of InGaN violet-LED structure
Author(s): Zhonghui Li; Zhijian Yang; Tongjun Yu; Guoyi Zhang; Yuchun Feng; Hanben Niu
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Paper Abstract

The violet-LEDs structure with InGaN/GaN multi-quantumn-wells (MQW) was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The x-ray diffraction (XRD) revealed distinct second order satellite peak. The photoluminescence (PL) wavelength was about 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with EL wavelength of 402nm and forward voltage about 3.6V under 20 mA injection current.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608029
Show Author Affiliations
Zhonghui Li, Shenzhen Univ. (China)
Tianjin Univ. (China)
Changchun Univ. of Science and Technology (China)
Zhijian Yang, Peking Univ. (China)
Tongjun Yu, Peking Univ. (China)
Guoyi Zhang, Peking Univ. (China)
Yuchun Feng, Shenzhen Univ. (China)
Hanben Niu, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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