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Proceedings Paper

Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition
Author(s): Tong Lai Chen; Xiao Min Li; Xia Zhang; Wei Dong Yu; Xiang Dong Gao
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Paper Abstract

(111)-oriented MgO thin films have been deposited on Si (111) substratres by pulsed laser deposition (PLD). The whole growth process of the films was in-situ monitored by using reflection high energy electron diffraction (RHEED) apparatus. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, the leakage current measurement of MgO films was also performed. Completely (111)-oriented MgO films with atomically smooth surfaces were obtained. The HREED observations show that the growth mode of the MgO films is 2D layer-by-layer growth. And the I-V characteristics evidenced the excellent crystallinity of the MgO films.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608010
Show Author Affiliations
Tong Lai Chen, Shanghai Institute of Ceramics, CAS (China)
Xiao Min Li, Shanghai Institute of Ceramics, CAS (China)
Xia Zhang, Shanghai Institute of Ceramics, CAS (China)
Wei Dong Yu, Shanghai Institute of Ceramics, CAS (China)
Xiang Dong Gao, Shanghai Institute of Ceramics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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