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Proceedings Paper

Field emission behavior of GaN nanoparticles and nanobelts
Author(s): Ke Yu; Yongsheng Zhang; Laiqiang Luo; Ziqiang Zhu
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Paper Abstract

Gallium nitride (GaN) nanoparticles and nanobelts films are successfully synthesized on Si (111) substrates through ammoniating Ga2O3 thin films deposited by radio frequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) are carried out to analyze as-synthesized GaN products. The field emission measurements show that the as-synthesized GaN nanoparticles and nanobelts have lower turn-on field of 5.8 and 6.1V/μm at the current density of 0.1μA/cm2, respectively. It is found that the Fowler-Nordheim (FN) plot of nanobelts exhibits nonlinearity. The experimental results demonstrated that there were great potential applications of the GaN nanoparticles and nanobelts for flat panel displays.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608008
Show Author Affiliations
Ke Yu, East China Normal Univ. (China)
Shandong Univ. (China)
Yongsheng Zhang, East China Normal Univ. (China)
Laiqiang Luo, East China Normal Univ. (China)
Ziqiang Zhu, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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