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Proceedings Paper

Single poly PMOS-based CMOS-compatible low voltage OTP
Author(s): Paola Vega-Castillo; Wolfgang H. Krautschneider
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Paper Abstract

A PMOS-based non-volatile memory cell fully compatible with standard CMOS fabrication processes is presented. It consists of a PMOS access transistor in series with a PMOS transistor whose gate is left floating. The cell configuration eliminates the requirement of a control gate, and therefore can be fabricated without using double poly gates. The cell saves area compared to other single poly non-volatile memory cells based on CMOS approaches, which require both NMOS and PMOS transistors. It also avoids the risk of latch-up. The cells were fabricated using a 350nm standard CMOS process. The programming mechanism of the cell is hot electron injection. The programming operation can be performed at programming voltages as low as |Vds|=4.5V. The cell can be used as a low voltage OTP and provides a very cheap alternative to integrate OTPs in CMOS ICs without any modification of the fabrication process.

Paper Details

Date Published: 30 June 2005
PDF: 8 pages
Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); doi: 10.1117/12.607964
Show Author Affiliations
Paola Vega-Castillo, Technical Univ. Hamburg-Harburg (Germany)
Wolfgang H. Krautschneider, Technical Univ. Hamburg-Harburg (Germany)


Published in SPIE Proceedings Vol. 5837:
VLSI Circuits and Systems II
Jose Fco. Lopez; Francisco V. Fernandez; Jose Maria Lopez-Villegas; Jose M. de la Rosa, Editor(s)

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