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Proceedings Paper

The process of low-stress silicon nitride and the application in the fabrication of MEMS device
Author(s): Hongtao He; Yongqing Xu; Yongjun Yang
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Paper Abstract

Silicon nitride (Si3N4) is an important thin film materials in the construction of micromachined devices that depend upon low stress thin films. This paper presents the methods to obtain desired low stress levels for use in micromachined devices. By analyzing the mechanism of the stress, we developed the processes by LPCVD, to achieve the quality levels in the applications of MEMS. And the results of this process allowed us to form a low stress film for the fabrications of micro cantilevers, and the applications in the micro mirrors in the MOEMS. At last, the results of the MEMS devices is presented.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607907
Show Author Affiliations
Hongtao He, Hebei Semiconductor Research Institute (China)
Yongqing Xu, Hebei Semiconductor Research Institute (China)
Yongjun Yang, Hebei Semiconductor Research Institute (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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